Document
SMD Type
N-Channel MOSFET 2SK1828
■ Features
● VDS (V) = 20V ● ID = 50mA ● RDS(ON) < 40Ω (VGS = 2.5V) ● Low threshold voltage: Vth = 0.5~1.5 V
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
MOSFET
Unit: mm
0.1 +0.05 -0.01
1. Gate 2. Source 3. Drain
0-0.1 +0.10.38
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VDS VGS ID PD TJ Tstg
Rating 20
±10 50 200 150
-55 to 150
Unit V
mA mW ℃
■ Electrical Characteristics Ta = 25℃
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate threshold voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On DelayTime Turn-Off DelayTime
Symbol VDSS IDSS IGSS VGS(th)
RDS(On) gFS Ciss Coss Crss td(on) td(off)
Test Conditions ID=250μA, VGS=0V VDS=20V, VGS=0V VDS=0V, VGS=±10V VDS=3V ID=100uA VGS=2.5V, ID=10mA VDS=3V, ID=10mA
VGS=0V, VDS=3V, f=1MHz
VGS=0~2.5V, VDS=3V, ID=10mA
Min Typ Max Unit 20 V
1 uA ±1 uA 0.5 1.5 V 40 Ω 20 ms 5.5 6.5 pF 1.6 140
ns 140
■ Marking
Marking
KI
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SMD Type
■ Typical Characterisitics
N-Channel MOSFET 2SK1828
MOSFET
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SMD Type
■ Typical Characterisitics
N-Channel MOSFET 2SK1828
MOSFET
www.kexin.com.cn 3
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