2SA1122

2SA1122 Silicon PNP Epitaxial Application Low frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 REJ03G0637-0200 (Previous ADE-208-1009) Rev.2.00 Aug.10.2005 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –55 –55 –5 –100 150 150 –55 to +150 (Ta = 25°C) Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 4 2SA1122 Electrical Characteristics Item Symbol Min Collector to base breakdown voltage V(BR)CBO –55 Collector to emitter breakdown voltage V(BR)CEO –55 Emitter to base breakdown voltage V(BR)EBO –5 Collector cutoff current ICBO — Emitter cutoff current DC current transfer ratio IEBO hFE*1 — 160 Collector to emitter saturation voltage VCE(sat) — Base to emitter voltage VBE — Note: 1. The 2SA1122 is grouped by hFE as follows. Grade C D Mark CC CD hFE 160 to 320 250 to 500 (Ta = 25°C) Typ Max Unit Test conditions —— V IC = –10 µA, IE = 0 —— V IC = –1 mA, RBE = ∞ —— V IE = –10 µA, IC = 0 — –0.5 µA VCB = –30 V, IE = 0 — –0.5 µA VEB = –2 V, IC = 0 — 500 VCE = –12 V, IC = –2 mA — –0.5 V IC = –10 mA, IB = –1 mA — –0.75 V VCE = –12 V, IC = –2 mA Rev.2.00 Aug 10, 2005 page 2 of 4 Collector power dissipation Pc (mW) 2SA1122 Main Characteristics Maximum Collector Dis...