2SJ208 MOSFET Datasheet

2SJ208 Datasheet, PDF, Equivalent


Part Number

2SJ208

Description

P-Channel MOSFET

Manufacture

Kexin

Total Page 3 Pages
Datasheet
Download 2SJ208 Datasheet


2SJ208
SMD Type
P-Channel MOSFET
2SJ208
MOSFET
Features
VDS (V) =-16V
ID =-2 A
RDS(ON) 1Ω (VGS =-4V)
RDS(ON) 3Ω (VGS =-2.5V)
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Power Dissipation
Junction Temperature
Junction Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ
Tstg
Rating
-16
±16
-2
-4
2
150
-55 to 150
Note.1: PW 10 ms, duty cycle 50%
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate to Source Cutoff Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=-250μA, VGS=0V
VDS=-16V, VGS=0V
VDS=0V, VGS=±16V
VGS=-5V ID=-1mA
VGS=-4V, ID=-1A
VGS=-2.5V, ID=-30mA
VDS=-3V, ID=-1A
VGS=0V, VDS=-3V, f=1MHz
VGS(on)=-3V, ID=-0.1A,
RL=20Ω,RG=10 Ω,VDD=-10V,
Unit
V
A
W
Min Typ Max Unit
-16 V
-1 uA
±5 uA
-1.4 -2.4 V
1
Ω
3
0.4 1.6
S
230
210 pF
35
175
540
ns
200
230
Marking
Marking
PF
www.kexin.com.cn 1

2SJ208
SMD Type
Typical Characterisitics
P-Channel MOSFET
2SJ208
MOSFET
2 www.kexin.com.cn


Features SMD Type P-Channel MOSFET 2SJ208 MOSFE T ■ Features ● VDS (V) =-16V ● I D =-2 A ● RDS(ON) < 1Ω (VGS =-4V) ● RDS(ON) < 3Ω (VGS =-2.5V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Volt age Gate-Source Voltage Continuous Drai n Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Junction Storage Temperature Range Sy mbol VDS VGS ID IDM PD TJ Tstg Rating -16 ±16 -2 -4 2 150 -55 to 150 Note.1 : PW ≤ 10 ms, duty cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltag e Zero Gate Voltage Drain Current Gate- Body leakage current Gate to Source Cut off Voltage Static Drain-Source On-Resi stance Forward Transconductance Input C apacitance Output Capacitance Reverse T ransfer Capacitance Turn-On DelayTime T urn-On Rise Time Turn-Off DelayTime Tur n-Off Fall Time Symbol VDSS IDSS IGSS VGS(off) RDS(On) gFS Ciss Coss Crss td(on) tr td(off) tf Test Conditions ID=-250μA, VGS=0V .
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