2SJ461

SMD Type MOSFET ■ Features ● VDS (V) =-50V ● ID =-0.1 A ● RDS(ON) ＜ 50Ω (VGS =-4V) ● RDS(ON) ＜ 100Ω (VGS =-2.5V) P-Channel MOSFET 2SJ461 +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current （Note.1) Power Dissipation Junction Temperature Junction Storage Temperature Range Note.1: PW ≤ 10 ms, duty cycle ≤ 1% Symbol VDS VGS ID IDM PD TJ Tstg Rating -50 ±7 -0.1 -0.2 0.2 150 -55 to 150 ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate to Source Cutoff Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Symbol VDSS IDSS IGSS VGS(off) RDS(On) gFS Ciss Coss Crss td(on) tr td(off) tf Test Conditions ID=-250μA, VGS=0V VDS=-50V, VGS=0V VDS=0V, VGS=±7V VGS=-3V ID=-1mA VGS=-4V, ID=-10mA VGS=-2.5V, ID=-3mA VDS=-3V, ID=-10mA VGS=0V, VDS=-3V, f=1MHz VGS(on)=-3V, ID=-20mA, RL=200Ω,RG=10Ω,VDD=-3V Unit V A W ℃ 0-0.1 +0.10.38 -0.1 1. Gate 2. Source 3. Drain Min Typ Max Unit -50 V -1 uA ±3 uA -0.7 -1.3 V 50 Ω 100 12 mS 6 9 pF 1.6 32 270 ns 45 130 ■ Marking Marking H19 www.kexin.com.cn 1 SMD Type ■ Typical Char...