Dual N-Channel Enhancement MOSFET
SSMMDD TTyyppee
MOSFET
Dual N-Channel Enhancement MOSFET KI8205A
Features
6.5 A, 20 V. rDS(on) = 0.025 rDS(on) = 0.02...
Description
SSMMDD TTyyppee
MOSFET
Dual N-Channel Enhancement MOSFET KI8205A
Features
6.5 A, 20 V. rDS(on) = 0.025 rDS(on) = 0.029
@ VGS = 4.5 V @ VGS = 2.5 V.
TSSOP-8
6.45
+0.1 -0.1
4.45
+0.1 -0.1
Unit: mm
+0.030.15 -0.03
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25
TA = 70 Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Jumction temperature and Storage temperature
Symbol VDS VGS ID IDM
PD
R JA R JC Tj.Tstg
Rating 20 10 6.5 20 2.0 1.6 78 40
-55 to +150
Unit V V A A W W /W /W
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SSMMDD TTyyppee
KI8205A
MOSFET
Electrical Characteristics Ta = 25
Parameter Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Gate Threshold Voltage
Drain-Source On-State Resistance *
On-State Drain Current * Forward Transconductance * Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage * * Pulse test; pulse width 300 s, duty cycle
Symbol
Testconditons
VDSS VGS = 0 V, ID = 250 A
IDSS
VDS = 20V , VGS = 0V VDS = 20V , VGS = 0V , TJ =55
IGSS VDS = 0V , VGS = 8V
VGS(th) VDS = VGS , ID = 250uA
VGS = 4.5V , ID = 6.5A rDS(on)
VGS = 2.5V , ID = 5.4A
ID(on) VDS = 5V , VGS = 4.5V
gfs VDS = 5V , ID =3A
C...
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