IRF540NS

SMD Type N-Channel MOSFET IRF540NS (KRF540NS) MOSFET ■ Features ● VDS (V) = 100V ● ID = 33 A (VGS = 10V) ● RDS(ON) ＜ 44mΩ (VGS = 10V) ● Fast Switching D TO-263 9.65 (Min) 10.67 (Max) 90 ~ 93 5.33 (Min) Unit:mm 6.22 (min) 1.65 (max) 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max) 9.65 (MAX) 8.51 (MIN) 15.88 (MAX) 14.61 (MIN) G S 1.27~1.78 1.14~1.40 0.51~0.99 2.54 0.43~0.63 1 Gate 2 Drain 3 Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Linear Derating Factor Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Ta=25℃ Ta=70℃ Tc=25℃ Symbol VDS VGS ID IDM IAR EAR dv/dt PD RthJA RthJC TJ Tstg Rating 100 ±20 33 23 110 16 13 7 130 0.87 40 1.15 175 -55 to 175 Unit V A A mJ V/ns W W/℃ ℃/W ℃ www.kexin.com.cn 1 SMD Type MOSFET N-Channel MOSFET IRF540NS (KRF540NS) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode ...