2SJ3053DV

SMD Type MOSFET P Channel MOSFET 2SJ3053DV ■ Features ● Surface Mount Package ● Super High Density Cell Design for Extremely Low RDS(on) ● Exceptional On-resistance and Maximum DC Current Capability ( SOT-23-6 ) 0.4+0.1 -0.1 6 54 1 23 +0.01 -0.01 +0.2 -0.1 +0.21.6 -0.1 +0.22.8 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.11.1 -0.1 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain 0-0.1 +0.10.68 -0.1 ■ Absolute Maximum Ratings (Ta = 25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (tp=10us) Power Dissipation Thermal Resistancefrom Junction- to-Ambient (Note 1) Junction Temperature Junction Storage Temperature Range Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) Symbol VDS VGS ID IDM PD RthJA TJ Tstg TL Note 1.Surface mounted on FR4 board using the minimum recommended pad size. Rating -150 ±20 -1.4 -5 0.35 357 150 -55 to 150 260 Unit V A W ℃/W ℃ www.kexin.com.cn 1 SMD Type MOSFET P Channel MOSFET 2SJ3053DV ■ Electrical Characteristics (Ta = 25°C, unless otherwise noted) Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=-120V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage (Note 2) VGS(th) VDS=VGS , ID=-250μA Static Drain-Source On-Resistance (Note 2) RDS(On) VGS=-10V, ID=-1.4A VGS=-6V, ID=-1A Forward Transconductance (Note 2) gFS V...