2SJ206 MOSFET Datasheet

2SJ206 Datasheet, PDF, Equivalent


Part Number

2SJ206

Description

P-Channel MOSFET

Manufacture

Kexin

Total Page 4 Pages
Datasheet
Download 2SJ206 Datasheet


2SJ206
SMD Type
P-Channel MOSFET
2SJ206
MOSFET
Features
VDS (V) =-30V
ID =-0.5 A (VGS =-10V)
RDS(ON) 3Ω (VGS =-10V)
RDS(ON) 4Ω (VGS =-4V)
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
Power Dissipation
Tc = 25
Junction Temperature
Junction Storage Temperature Range
Note.1: PW 10 ms, duty cycle 50%
Symbol
VDS
VGS
ID
IDM
PD
TJ
Tstg
Rating
-30
±20
-0.5
-1
2
150
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate to Source Cutoff Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
VDSS
IDSS
IGSS
VGS(off)
RDS(On)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Conditions
ID=-250μA, VGS=0V
VDS=-30V, VGS=0V
VDS=0V, VGS=±16V
VGS=-5V ID=-1mA
VGS=-10V, ID=-0.3A
VGS=-4V, ID=-0.3A
VDS=-5V, ID=-0.3A
VGS=0V, VDS=-5V, f=1MHz
VGS(on)=-4V, ID=-0.3A,
RL=17Ω,RG=10 Ω,VDD=-5V,
Marking
Marking
PH
Unit
V
A
W
Min Typ Max Unit
-30 V
-1 uA
±5 uA
-1 -3 V
3
Ω
4
0.4 S
100
80 pF
15
120
420
ns
75
140
www.kexin.com.cn 1

2SJ206
SMD Type
Typical Characterisitics
P-Channel MOSFET
2SJ206
MOSFET
2 www.kexin.com.cn


Features SMD Type P-Channel MOSFET 2SJ206 MOSFE T ■ Features ● VDS (V) =-30V ● I D =-0.5 A (VGS =-10V) ● RDS(ON) < 3 Ω (VGS =-10V) ● RDS(ON) < 4Ω (VGS =-4V) 1.70 0.1 0.42 0.1 0.46 0.1 1 .Gate 2.Drain 3.Source ■ Absolute Ma ximum Ratings Ta = 25℃ Parameter Dr ain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drai n Current (Note.1) Power Dissipation Tc = 25℃ Junction Temperature Junct ion Storage Temperature Range Note.1: PW ≤ 10 ms, duty cycle ≤ 50% Symbo l VDS VGS ID IDM PD TJ Tstg Rating -30 ±20 -0.5 -1 2 150 -55 to 150 ■ Ele ctrical Characteristics Ta = 25℃ Par ameter Drain-Source Breakdown Voltage Z ero Gate Voltage Drain Current Gate-Bod y leakage current Gate to Source Cutoff Voltage Static Drain-Source On-Resista nce Forward Transconductance Input Capa citance Output Capacitance Reverse Tran sfer Capacitance Turn-On DelayTime Turn -On Rise Time Turn-Off DelayTime Turn-O ff Fall Time Symbol VDSS IDSS IGSS VGS(off) RDS(On) gFS Ciss Coss Crss td(on) tr td(off) tf .
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