NTR5105P

SMD Type Ƶ Features ƽ VDS (V) =-60V ƽ ID =-200m A ƽ RDS(ON) ˘ 10¡ (VGS =-10V) ƽ RDS(ON) ˘ 15¡ (VGS =-4V) P-Channel MOSFET NTR5105P SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.12.4 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.10.38 -0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Junction Storage Temperature Range Note.1: PW İ 10ms,Duty Cycle İ 50% Symbol VDS VGS ID IDM PD TJ Tstg Rating -60 ±20 -200 -400 200 150 -55 to 150 Unit V mA mW ć Ƶ Electrical Characteristics Ta = 25ć Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Cut off Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Symbol VDSS IDSS IGSS VGS(off) RDS(On) gFS Ciss Coss Crss td(on) tr td(off) tf Test Conditions ID=-250­A, VGS=0V VDS=-60V, VGS=0V VDS=0V, VGS=±20V VDS=-5V,ID=-1uA VGS=-4V, ID=-10mA VGS=-10V, ID=-10mA VDS=-5V, ID=-10mA VGS=0V, VDS=-5V, f=1MHz VGS(on)=-4V, VDS=-5V, ID=-10mA, RL=500¡,RGEN=10¡ Min Typ Max Unit -60 V -1 uA ±1 uA -1.4 -2.4 V 15 ȍ 10 20 45 mS 27 21 pF 3 120 190 ns 150 180 Ƶ Marking Marking H16 www.kexin.com.cn 1 SMD Type Ƶ...