KI2305

SMD Type ■ Features ● VDS (V) = -20V ● RDS(ON)＜0.065 Ω (VGS = -4.5V) ● RDS(ON)＜0.100 Ω (VGS = -2.5V) ● RDS(ON)＜0.250 Ω (VGS = -1.8V) P-Channel MOSFET KI2305 MOSFET D G S +0.22.8 -0.2 SOT-23-3 2.9+0.2 -0.2 0.4+0.1 -0.05 3 12 0.95+0.1 -0.1 1.9+0.2 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.10.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-source voltage Gate-source voltage Continuous drain current -- TA=25℃ TA=70℃ Pulsed drain current Power dissipation -- TA=25℃ TA=70℃ Thermal Resistance.Junction-to-Ambient Operating junction and storage temperature range Symbol VDS VGS ID IDM PD RθJA Tj,Tstg Rating -20 ±12 -4.2 -3.4 -10 1.38 0.8 90 -55 to +150 Unit V V A A W ℃/W ℃ www.kexin.com.cn 1 SMD Type KI2305 MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-body leakage Drain-source on-state resistance On-state drain current Forward transconductance Input capacitance * Output capacitance * Reverse transfer capacitance * Total gate charge * Gate-source charge * Gate-drain charge * Turn-on Delay time Turn-on Reise time Turn-off Dealy time Turn-off Fall time Continuous source current (diode conduction) * Diode forward voltage * Pulse test: PW ≤ 300 μs duty cycle ≤ 2%. Symbol Testconditons VDSS VGS = 0 V, ID = -10 μA VGS(th) VDS = VGS, ID = -250 μA IDSS IGSS VDS = -20 V , VGS = 0 V VDS = -16 V ...