2SJ204 MOSFET Datasheet

2SJ204 Datasheet, PDF, Equivalent


Part Number

2SJ204

Description

P-Channel Logic Level MOSFET

Manufacture

Freescale

Total Page 6 Pages
Datasheet
Download 2SJ204 Datasheet


2SJ204
Freescale
2SJ 204
P - Channel Logic Level MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low
rDS(on) assures minimal power loss and
conserves energy, making this device ideal
for use in power management circuitry.
Typical applications are voltage control
small signal switch, power management in
portable and battery-powered products
such as computer portable electronics and
other battery power application.
• Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
• Fast Switch
• Low Gate Charge
• Miniature SOT-23 Surface Mount Package
Saves Board Space
PRODUCT SUMMARY
VDS (V)
-30
rDS(on) ()
0.20 @ VGS = -10 V
0.30 @ VGS = -4.5V
G
S
ID (A)
-2.1
-1.7
D
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
-30 V
±20
-2.1
-1.7 A
±10
Continuous Source Current (Diode Conduction)a
IS -0.4 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
PD
TJ, Tstg
1.25
0.8
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 5 sec
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
Symbol
RT HJA
Maximum Units
250
285
oC/W
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2SJ204
Freescale
2SJ 204
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol
Test Conditions
Min
Limits
Typ
Max
Unit
Static
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Threshold Voltage
On-State Drain CurrentA
IDSS
IGSS
VGS(th)
ID(on)
VDS = -24 V, VGS = 0 V
VDS = -24 V, VGS = 0 V, TJ = 55oC
VDS = 0 V, VGS = ±20 V
VDS = VGS, ID = -250 uA
VDS = -5 V, VGS = -4.5 V
-1.30
-3
-1 µA
-10
±100 nA
V
A
Drain-Source On-ResistanceA
Forward TranconductanceA
Diode Forward Voltage
Dynamicb
rDS(on)
gfs
VSD
VGS = -10 V, ID = -2.1 A
VGS = -4.5 V, ID = -1.7 A
VDS = -5 V, ID = -2.1 A
IS = -0.4 A, VGS = 0 V
0.20
0.30
2
-0.70 -1.2
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS = -10 V, VGS = -5 V,
ID = -2.1 A
3.4
0.8 nC
1.5
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
td(on)
tr
td(off)
tf
VDS = -10 V, ID = -1.1 A,
RG = 50 , VGEN = -10 V
8
18
52
ns
39
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
FREESCALE reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou t of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheet s and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold freescale and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that freescale was negligent regarding the design or m anufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
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Features Freescale 2SJ 204 P - Channel Logic Le vel MOSFET These miniature surface mou nt MOSFETs utilize High Cell Density pr ocess. Low rDS(on) assures minimal powe r loss and conserves energy, making thi s device ideal for use in power managem ent circuitry. Typical applications are voltage control small signal switch, p ower management in portable and battery -powered products such as computer port able electronics and other battery powe r application. • Low rDS(on) Provides Higher Efficiency and Extends Battery Life • Fast Switch • Low Gate Charg e • Miniature SOT-23 Surface Mount Pa ckage Saves Board Space PRODUCT SUMMAR Y VDS (V) -30 rDS(on) (Ω) 0.20 @ VG S = -10 V 0.30 @ VGS = -4.5V G S ID ( A) -2.1 -1.7 D ABSOLUTE MAXIMUM RATING S (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drai n-Source Voltage Gate-Source Voltage Co ntinuous Drain Currenta Pulsed Drain Cu rrentb VDS VGS TA=25oC TA=70oC ID IDM -30 V ±20 -2.1 -1.7 A ±10 Continuous Source Current (Diode Conducti.
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