IRG4BC30UDPBF

PD-94810A IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package • Lead-Free C G E n-channel VCES = 600V VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs Absolute Maximum Ratings TO-220AB VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 23 12 92 92 ...