PSMN8R0-40PS

PSMN8R0-40PS N-channel 40 V 7.6 mΩ standard level MOSFET Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for standard level gate drive sources 1.3 Applications „ DC-to-DC convertors „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 - - 40 V - - 77 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 86 W Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 20 V; see Figure 14; see Figure 15 - 3.8 - nC Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 [1] - 6.2 7.6 mΩ [1] Measured 3 mm from package. Nexperia 2. Pinning information Table 2. Pinning information Pin Symbol Description 1G gate 2D drain 3S source mb D mounting base; connected to drain PSMN8R0-40PS N-channel 40 V 7.6 mΩ standard level MOSFET Simplified outline mb Graphic symbol D G mbb076 S 3. Ordering information 123 SOT78 (TO-220AB) Table 3. Ordering informa...