1N945

@ MOTOROLA IN941,A,B thru IN945,A,B ])p!-ii~'n.PI·!-i I ) a t a S h p p t TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES Temperature-compensated zener reference diodes utilizing an oxide-passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure. Designer's Data for "Worst Case" Conditions The Designers Data Sheet permits the design of most circuits entirely from the information presented. Limit data - representing device characteristic boundaries - are given to facilitate "worst case" design. TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 11.7 V, 500 mW MAXIMUM RATINGS Junction Temperature: -55 to +17SOC Storage Temperature: -65 to +175°C DC Power Dissipation: 500 mW @ T A = 25°C MECHANICAL CHARACTERISTICS CASE: Hermetically sealed, all-glass DIMENSIONS: See outline drawing. FINISH: All external surfaces are corrosion resistant and leads are readily solderable and weldable. POLARITY: Cathode indicated by polarity band. WEIGHT: 0.2 Gram lapprox) MOUNTING POSITION: Any ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted Vz = 11.7 V ± 5.0%* @ IZT = 7.5 mAl JEDEC Type No. (Not. I) lN941 lN942 lN943 lN944 lN945 lN941A lN942A lN943A lN944A lN945A lN941B I N942B lN943B lN944B lN945B Maximum Voltage Change 6VZ (Volts) (Note 2) 0.088 0.044 0.018 0.009 0.004 0.181 0.090 0.036 0.018 0.009 0.239 0.120 0.047 0.024 0.012 Ambient Test Temperature °c ±l°C 0, +25, +75 ·55,0,+25, +75, +100 -55,0, +25, +75,+100,+150 ...