ZENER REFERENCE DIODE
@ MOTOROLA
IN941,A,B
thru
IN945,A,B
])p!-ii~'n.PI·!-i I ) a t a S h p p t
TEMPERATURE-COMPENSATED ZENER REFERENCE DIOD...
Description
@ MOTOROLA
IN941,A,B
thru
IN945,A,B
])p!-ii~'n.PI·!-i I ) a t a S h p p t
TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES
Temperature-compensated zener reference diodes utilizing an oxide-passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure.
Designer's Data for "Worst Case" Conditions The Designers Data Sheet permits the design of most circuits entirely from the information presented. Limit data - representing device characteristic boundaries - are given to facilitate "worst case" design.
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES
11.7 V, 500 mW
MAXIMUM RATINGS
Junction Temperature: -55 to +17SOC Storage Temperature: -65 to +175°C DC Power Dissipation: 500 mW @ T A = 25°C
MECHANICAL CHARACTERISTICS
CASE: Hermetically sealed, all-glass DIMENSIONS: See outline drawing. FINISH: All external surfaces are corrosion resistant and leads are readily
solderable and weldable. POLARITY: Cathode indicated by polarity band. WEIGHT: 0.2 Gram lapprox) MOUNTING POSITION: Any
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted Vz = 11.7 V ± 5.0%* @ IZT = 7.5 mAl
JEDEC Type No. (Not. I)
lN941 lN942 lN943 lN944 lN945 lN941A lN942A lN943A lN944A lN945A lN941B I N942B lN943B lN944B lN945B
Maximum Voltage Change
6VZ (Volts) (Note 2)
0.088 0.044 0.018 0.009 0.004 0.181 0.090 0.036 0.018 0.009 0.239 0.120 0.047 0.024 0.012
Ambient Test
Temperature
°c
±l°C
0, +25, +75
·55,0,+25, +75, +100
-55,0, +25, +75,+100,+150
...
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