PSMN1R7-30YL

PSMN1R7-30YL N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK Rev. 1 — 30 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  Advanced TrenchMOS provides low RDSon and low gate charge  High efficiency gains in switching power convertors  Improved mechanical and thermal characteristics  LFPAK provides maximum power density in a Power SO8 package 1.3 Applications  DC-to-DC converters  Lithium-ion battery protection  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 13 VGS = 10 V; ID = 15 A; Tj = 25 °C VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 14; see Figure 15 Min Typ Max Unit - - 30 V [1] - - 100 A --55 - 109 W 175 °C - - 2.4 mΩ - 1.3 1.7 mΩ - 8.7 - nC Nexperia PSMN1R7-30YL N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK Table 1. Quick reference data …continued Symbol Parameter Conditions QG...