PSMN2R0-30YL Datasheet (PDF)





PSMN2R0-30YL Datasheet - N-channel MOSFET

PSMN2R0-30YL   PSMN2R0-30YL  

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PSMN2R0-30YL N-channel 30 V 2 mΩ logi c level MOSFET in LFPAK Rev. 4 — 10 March 2011 Product data sheet 1. Prod uct profile 1.1 General description Lo gic level N-channel enhancement mode Fi eld-Effect Transistor (FET) in a plasti c package using TrenchMOS technology. T his product is designed and qualified f or use in industrial and communications applications. 1.2 Features and

PSMN2R0-30YL Datasheet - N-channel MOSFET

PSMN2R0-30YL   PSMN2R0-30YL  
benefits „ High efficiency due to low switching and conduction losses „ Sui table for logic level gate drive source s 1.3 Applications „ Class-D amplifie rs „ DC-to-DC converters „ Motor con trol „ Server power supplies 1.4 Quic k reference data Table 1. Quick refere nce data Symbol VDS Parameter drain-s ource voltage Conditions Tj ≥ 25 °C ; Tj ≤ 175 °C ID drain current Tmb








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