PSMN6R0-30YL

PSMN6R0-30YL N-channel 30 V 6 mΩ logic level MOSFET in LFPAK Rev. 04 — 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for logic level gate drive sources 1.3 Applications  Class-D amplifiers  DC-to-DC converters  Motor control  Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Tj junction temperature Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 15 A; resistance Tj = 25 °C Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 14; see Figure 15 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 73 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped Min Typ Max Unit - - 30 V - - 79 A - - 55 W -55 - 175 °C - 4.26 6 mΩ - 3.08 - nC - 11 - nC - - 26 mJ Nexperia PSMN6R0-30YL N-channel 30 V 6 mΩ logic level MOSFET in LFPAK 2. Pinning information Table 2. Pin 1 2 3 4 mb ...