PSMN6R0-30YL Datasheet (data sheet) PDF





PSMN6R0-30YL Datasheet, N-channel MOSFET

PSMN6R0-30YL   PSMN6R0-30YL  

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PSMN6R0-30YL N-channel 30 V 6 mΩ logi c level MOSFET in LFPAK Rev. 04 — 10 March 2011 Product data sheet 1. Pro duct profile 1.1 General description L ogic level N-channel enhancement mode F ield-Effect Transistor (FET) in a plast ic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communication s applications. 1.2 Features an

PSMN6R0-30YL Datasheet, N-channel MOSFET

PSMN6R0-30YL   PSMN6R0-30YL  
d benefits  High efficiency due to lo w switching and conduction losses  Suitable for logic level gate drive sou rces 1.3 Applications  Class-D ampl ifiers  DC-to-DC converters  Mot or control  Server power supplies 1 .4 Quick reference data Table 1. Quick reference data Symbol VDS ID Paramet er drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb =








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