Document
PSMN4R0-40YS
N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET
Rev. 02 — 12 July 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1.3 Applications
DC-to-DC convertors Lithium-ion battery protection Load switching
Motor control Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12; see Figure 13
Min Typ Max Unit - - 40 V
- - 100 A
- - 106 W
-55 -
175 °C
- - 5.6 mΩ - 3.2 4.2 mΩ
Nexperia
PSMN4R0-40YS
N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Dynamic characteristics
QGD QG(tot)
gate-drain charge VGS = 10 V; ID = 25 A; total gate charge VDS = 20 V; see Figure 14;
see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C;
drain-source
ID = 100 A; Vsup ≤ 40 V;
avalanche energy unclamped; RGS = 50 Ω
Min Typ Max Unit - 7 - nC - 38 - nC
- - 77 mJ
2. Pinning information
Table 2. Pin 1 2 3 4 mb
Pinning information Symbol Description S source S source S source G gate D drain
3. Ordering information
Simplified outline
mb
1234
SOT669 (LFPAK)
Graphic symbol
D
G mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN4R0-40YS
LFPAK
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
PSMN4R0-40YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 12 July 2010
© Nexperia B.V. 2017. All rights reserved
2 of 15
Nexperia
PSMN4R0-40YS
N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VDGR VGS ID
IDM
Parameter drain-source voltage drain-gate voltage gate-source voltage drain current
peak drain current
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
VGS = 10 V; Tmb = 100 °C; see Figure 1 VGS = 10 V; Tmb = 25 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current ISM peak source current Avalanche ruggedness
Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 40 V; unclamped; RGS = 50 Ω
Min Max Unit - 40 V - 40 V -20 20 V - 83 A - 100 A - 472 A
- 106 W -55 175 °C -55 175 °C - 260 °C
- 100 A - 472 A
- 77 mJ
120 ID (A)
100
80
60
40
20
0 0
(1)
50
003aad266
100 150 200 Tmb (°C)
120
Pder (%)
80
03aa16
40
0 0 50 100 150 200 Tmb (°C)
Fig 1. Continuous drain current as a function of mounting base temperature
Fig 2. Normalized total power dissipation as a function of mounting base temperature
PSMN4R0-40YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 12 July 2010
© Nexperia B.V. 2017. All rights reserved
3 of 15
Nexperia
103 ID (A) 102
10
1
10-1 10-1
PSMN4R0-40YS
N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET
Limit RDSon = VDS / ID
(1)
003aad321
10μ s
100μ s
1ms DC
10ms 100ms
1 10 VDS (V) 102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN4R0-40YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 12 July 2010
© Nexperia B.V. 2017. All rights reserved
4 of 15
Nexperia
PSMN4R0-40YS
N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
Conditions see Figure 4
Min Typ Max Unit - 0.54 1.42 K/W
003aac657
10
Zth(j-mb) (K/W)
1 δ = 0.5
0.2 10-1 0.1
0.05 0.02
10-2 single shot
P δ = tp T
10-3 10-6
10-5
10-4
10-3
10-2
tp T
10-1 tp (s)
t 1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN4R0-40YS
Product dat.