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PSMN4R0-40YS Dataheets PDF



Part Number PSMN4R0-40YS
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PSMN4R0-40YS DatasheetPSMN4R0-40YS Datasheet (PDF)

PSMN4R0-40YS N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET Rev. 02 — 12 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  Advanced TrenchMOS provides low RDSon and low gate charge  High efficiency gains in switching power converters  Improved mechani.

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PSMN4R0-40YS N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET Rev. 02 — 12 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  Advanced TrenchMOS provides low RDSon and low gate charge  High efficiency gains in switching power converters  Improved mechanical and thermal characteristics  LFPAK provides maximum power density in a Power SO8 package 1.3 Applications  DC-to-DC convertors  Lithium-ion battery protection  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 Ptot total power Tmb = 25 °C; see Figure 2 dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12; see Figure 13 Min Typ Max Unit - - 40 V - - 100 A - - 106 W -55 - 175 °C - - 5.6 mΩ - 3.2 4.2 mΩ Nexperia PSMN4R0-40YS N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET Table 1. Quick reference data …continued Symbol Parameter Conditions Dynamic characteristics QGD QG(tot) gate-drain charge VGS = 10 V; ID = 25 A; total gate charge VDS = 20 V; see Figure 14; see Figure 15 Avalanche ruggedness EDS(AL)S non-repetitive VGS = 10 V; Tj(init) = 25 °C; drain-source ID = 100 A; Vsup ≤ 40 V; avalanche energy unclamped; RGS = 50 Ω Min Typ Max Unit - 7 - nC - 38 - nC - - 77 mJ 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S source S source S source G gate D drain 3. Ordering information Simplified outline mb 1234 SOT669 (LFPAK) Graphic symbol D G mbb076 S Table 3. Ordering information Type number Package Name PSMN4R0-40YS LFPAK Description Version plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 PSMN4R0-40YS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 12 July 2010 © Nexperia B.V. 2017. All rights reserved 2 of 15 Nexperia PSMN4R0-40YS N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID IDM Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ VGS = 10 V; Tmb = 100 °C; see Figure 1 VGS = 10 V; Tmb = 25 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3 Ptot total power dissipation Tstg storage temperature Tj junction temperature Tsld(M) peak soldering temperature Source-drain diode Tmb = 25 °C; see Figure 2 IS source current ISM peak source current Avalanche ruggedness Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 40 V; unclamped; RGS = 50 Ω Min Max Unit - 40 V - 40 V -20 20 V - 83 A - 100 A - 472 A - 106 W -55 175 °C -55 175 °C - 260 °C - 100 A - 472 A - 77 mJ 120 ID (A) 100 80 60 40 20 0 0 (1) 50 003aad266 100 150 200 Tmb (°C) 120 Pder (%) 80 03aa16 40 0 0 50 100 150 200 Tmb (°C) Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature PSMN4R0-40YS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 12 July 2010 © Nexperia B.V. 2017. All rights reserved 3 of 15 Nexperia 103 ID (A) 102 10 1 10-1 10-1 PSMN4R0-40YS N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET Limit RDSon = VDS / ID (1) 003aad321 10μ s 100μ s 1ms DC 10ms 100ms 1 10 VDS (V) 102 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN4R0-40YS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 12 July 2010 © Nexperia B.V. 2017. All rights reserved 4 of 15 Nexperia PSMN4R0-40YS N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions see Figure 4 Min Typ Max Unit - 0.54 1.42 K/W 003aac657 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 10-1 0.1 0.05 0.02 10-2 single shot P δ = tp T 10-3 10-6 10-5 10-4 10-3 10-2 tp T 10-1 tp (s) t 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN4R0-40YS Product dat.


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