Document
PSMN013-80YS
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
Rev. 01 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
1.3 Applications
DC-to-DC converters Lithium-ion battery protection Load switching
Motor control Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche energy
Dynamic characteristics
Tj ≥ 25 °C; Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped
QGD gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15
QG(tot) total gate charge
VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15
Static characteristics
RDSon drain-source on-state resistance
VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13
Min Typ Max Unit
- - 80 V
- - 60 A
- - 106 W
-55 -
175 °C
- - 70 mJ
- 8 - nC - 37 - nC
- - 19.8 mΩ - 9.7 12.9 mΩ
Nexperia
PSMN013-80YS
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1S
source
2S
source
3S
source
4G
gate
mb D
mounting base; connected to drain
3. Ordering information
Simplified outline
mb
1234
SOT669 (LFPAK)
Graphic symbol
D
G mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
PSMN013-80YS LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads
4. Limiting values
Version SOT669
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VDGR VGS ID
IDM Ptot Tstg Tj Tsld(M)
Parameter drain-source voltage drain-gate voltage gate-source voltage drain current
peak drain current total power dissipation storage temperature junction temperature peak soldering temperature
Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tj ≥ 25 °C; Tj ≤ 150 °C; RGS = 20 kΩ
VGS = 10 V; Tmb = 100 °C; see Figure 1 VGS = 10 V; Tmb = 25 °C; see Figure 1 tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3 Tmb = 25 °C; see Figure 2
Source-drain diode
IS source current Tmb = 25 °C
ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 80 V;
drain-source avalanche RGS = 50 Ω; unclamped
energy
Min Max Unit
- 80 V
- 80 V
-20 20
V
- 42 A
- 60 A
- 233 A
- 106 W
-55 175 °C
-55 175 °C
- 260 °C
- 60 A - 233 A
- 70 mJ
PSMN013-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
© Nexperia B.V. 2017. All rights reserved
2 of 13
Nexperia
60 ID (A) 40
PSMN013-80YS
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
003aad230
120
Pder (%)
80
03aa16
20 40
0 0 50 100 150 200 Tmb (°C)
Fig 1. Continuous drain current as a function of mounting base temperature
103 ID (A) Limit RDSon = VDS / ID 102
10
0 0 50 100 150 200 Tmb (°C)
Fig 2. Normalized total power dissipation as a function of mounting base temperature
003aad314 10μ s
100μ s
1
10-1 1
DC 10
1ms 10ms 100ms 102
VDS (V)
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN013-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
© Nexperia B.V. 2017. All rights reserved
3 of 13
Nexperia
PSMN013-80YS
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 4 junction to mounting base
Min Typ Max Unit - 0.54 1.4 K/W
003aac657 10
Zth(j-mb) (K/W)
1 δ = 0.5
0.2 10-1 0.1
0.05 0.02
10-2 single shot
P δ = tp T
10-3 10-6
10-5
10-4
10-3
10-2
tp T
10-1 tp (s)
t 1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN013-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
© Nexperia B.V. 2017. All rights reserved
4 of 13
Nexperia
PSMN013-80YS
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
6. Characteristics
Table 6. Characteristics Tested to JEDEC standards where applicable.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS VGS(th)
drain-source breakdown voltage
gate-source threshold voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = .