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PSMN013-80YS Dataheets PDF



Part Number PSMN013-80YS
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PSMN013-80YS DatasheetPSMN013-80YS Datasheet (PDF)

PSMN013-80YS N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching power converters „ Improved mechan.

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PSMN013-80YS N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching power converters „ Improved mechanical and thermal characteristics „ LFPAK provides maximum power density in a Power SO8 package 1.3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics Tj ≥ 25 °C; Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 QG(tot) total gate charge VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 Min Typ Max Unit - - 80 V - - 60 A - - 106 W -55 - 175 °C - - 70 mJ - 8 - nC - 37 - nC - - 19.8 mΩ - 9.7 12.9 mΩ Nexperia PSMN013-80YS N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1S source 2S source 3S source 4G gate mb D mounting base; connected to drain 3. Ordering information Simplified outline mb 1234 SOT669 (LFPAK) Graphic symbol D G mbb076 S Table 3. Ordering information Type number Package Name Description PSMN013-80YS LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads 4. Limiting values Version SOT669 Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Tsld(M) Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak soldering temperature Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tj ≥ 25 °C; Tj ≤ 150 °C; RGS = 20 kΩ VGS = 10 V; Tmb = 100 °C; see Figure 1 VGS = 10 V; Tmb = 25 °C; see Figure 1 tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3 Tmb = 25 °C; see Figure 2 Source-drain diode IS source current Tmb = 25 °C ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C Avalanche ruggedness EDS(AL)S non-repetitive VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 80 V; drain-source avalanche RGS = 50 Ω; unclamped energy Min Max Unit - 80 V - 80 V -20 20 V - 42 A - 60 A - 233 A - 106 W -55 175 °C -55 175 °C - 260 °C - 60 A - 233 A - 70 mJ PSMN013-80YS_1 Product data sheet Rev. 01 — 25 June 2009 © Nexperia B.V. 2017. All rights reserved 2 of 13 Nexperia 60 ID (A) 40 PSMN013-80YS N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET 003aad230 120 Pder (%) 80 03aa16 20 40 0 0 50 100 150 200 Tmb (°C) Fig 1. Continuous drain current as a function of mounting base temperature 103 ID (A) Limit RDSon = VDS / ID 102 10 0 0 50 100 150 200 Tmb (°C) Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aad314 10μ s 100μ s 1 10-1 1 DC 10 1ms 10ms 100ms 102 VDS (V) 103 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN013-80YS_1 Product data sheet Rev. 01 — 25 June 2009 © Nexperia B.V. 2017. All rights reserved 3 of 13 Nexperia PSMN013-80YS N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter Conditions thermal resistance from see Figure 4 junction to mounting base Min Typ Max Unit - 0.54 1.4 K/W 003aac657 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 10-1 0.1 0.05 0.02 10-2 single shot P δ = tp T 10-3 10-6 10-5 10-4 10-3 10-2 tp T 10-1 tp (s) t 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN013-80YS_1 Product data sheet Rev. 01 — 25 June 2009 © Nexperia B.V. 2017. All rights reserved 4 of 13 Nexperia PSMN013-80YS N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET 6. Characteristics Table 6. Characteristics Tested to JEDEC standards where applicable. Symbol Parameter Conditions Static characteristics V(BR)DSS VGS(th) drain-source breakdown voltage gate-source threshold voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C ID = 250 µA; VGS = 0 V; Tj = .


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