PSMN0R7-25YLD
N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in
LFPAK56 using NextPowerS3 Technology
25 July 2017
...
PSMN0R7-25YLD
N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in
LFPAK56 using NextPowerS3 Technology
25 July 2017
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP's unique "
SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated
Schottky or
Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
2. Features and benefits
100% Avalanche tested at I(AS) = 190 A Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs Unique "
SchottkyPlus" technology;
Schottky-like performance with < 1 μA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds,
qualified to 150 °C Wave solderable; exposed leads for optimal visual solder inspection
3. Applications
On-board DC:DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage
regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and b...
