PSMN0R9-25YLD Datasheet (data sheet) PDF





PSMN0R9-25YLD Datasheet, N-channel MOSFET

PSMN0R9-25YLD   PSMN0R9-25YLD  

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PSMN0R9-25YLD N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 u sing NextPowerS3 Technology 27 April 2 016 Product data sheet 1. General des cription Logic level gate drive N-chann el enhancement mode MOSFET in LFPAK56 p ackage. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, l ow spiking performance usually associat ed with MOSFETS with an integrated Scho ttky or Schottky-like diode but without problematic high leakage current. Next PowerS3 is particularly suited to high efficiency applications at high switchi ng frequencies. 2. Features and benefi ts • 100% Avalanche tested at I(

PSMN0R9-25YLD Datasheet, N-channel MOSFET

PSMN0R9-25YLD   PSMN0R9-25YLD  
AS) = 190 A • Ultra low QG, QGD and QO SS for high system efficiency, especial ly at higher switching frequencies • Superfast switching with soft-recovery • Low spiking and ringing for low EMI designs • Unique “SchottkyPlus” technology; Schottky-like performance w ith < 1 µA leakage at 25 °C • Optim ised for 4.5 V gate drive • Low paras itic inductance and resistance • High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C • Wa ve solderable; exposed leads for optima l visual solder inspection 3. Applicat ions • On-board DC:DC solutions for s erver and telecommunications • Second ary-side synchronous rectification in t elecommunication applications • Volta ge regulator modules (VRM) • Point-of -Load (POL) modules • Power delivery for V-core, ASIC, DDR, GPU, VGA and sys tem components • Brushed and brushles s motor control • Power OR-ing 4. Qu ick reference data Table 1. Symbol VDS ID Quick reference data Parameter dra in-source voltage drain current Condit ions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Min Typ Max U nit - - 25 V [1] - - 300 A Nexperia P SMN0R9-25YLD N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 usi ng NextPowerS3 Technology Symbol Parameter Conditions Ptot total power dissipation Tmb = 25








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