PSMN1R0-25YLD Datasheet (data sheet) PDF





PSMN1R0-25YLD Datasheet, N-channel MOSFET

PSMN1R0-25YLD   PSMN1R0-25YLD  

Search Keywords: PSMN1R0-25YLD, datasheet, pdf, nexperia, N-channel, MOSFET, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

PSMN1R0-25YLD N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 us ing NextPowerS3 Technology 19 April 20 16 Product data sheet 1. General desc ription Logic level gate drive N-channe l enhancement mode MOSFET in LFPAK56 pa ckage. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, lo w spiking performance usually associate d with MOSFETS with an integrated Schot tky or Schottky-like diode but without problematic high leakage current. NextP owerS3 is particularly suited to high e fficiency applications at high switchin g frequencies. 2. Features and benefit s • 100% Avalanche tested at I(A

PSMN1R0-25YLD Datasheet, N-channel MOSFET

PSMN1R0-25YLD   PSMN1R0-25YLD  
S) = 100 A • Ultra low QG, QGD and QOS S for high system efficiency, especiall y at higher switching frequencies • S uperfast switching with soft-recovery Low spiking and ringing for low EMI designs • Unique “SchottkyPlus” t echnology; Schottky-like performance wi th < 1 µA leakage at 25 °C • Optimi sed for 4.5 V gate drive • Low parasi tic inductance and resistance • High reliability clip bonded and solder die attach Power SO8 package; no glue, no w ire bonds, qualified to 175 °C • Wav e solderable; exposed leads for optimal visual solder inspection 3. Applicati ons • On-board DC:DC solutions for se rver and telecommunications • Seconda ry-side synchronous rectification in te lecommunication applications • Voltag e regulator modules (VRM) • Point-of- Load (POL) modules • Power delivery f or V-core, ASIC, DDR, GPU, VGA and syst em components • Brushed and brushless motor control • Power OR-ing 4. Qui ck reference data Table 1. Symbol VDS ID Quick reference data Parameter drai n-source voltage drain current Conditi ons 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Min Typ Max Un it - - 25 V [1] - - 100 A Nexperia PS MN1R0-25YLD N-channel 25 V, 1.0 mΩ, 24 0 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Symbol Parameter Conditions Ptot total power dissipation Tmb = 25 °C








@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)