PSMN4R0-30YLD Datasheet (data sheet) PDF





PSMN4R0-30YLD Datasheet, N-channel MOSFET

PSMN4R0-30YLD   PSMN4R0-30YLD  

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PSMN4R0-30YLD N-channel 30 V, 4.0 mΩ l ogic level MOSFET in LFPAK56 using Nex tPowerS3 Technology 10 October 2013 P roduct data sheet 1. General descripti on Logic level gate drive N-channel enh ancement mode MOSFET in LFPAK56 package . NextPowerS3 portfolio utilising Nexpe ria’s unique “SchottkyPlus” techn ology delivers high efficiency, low spi king performance usually associated wit h MOSFETs with an integrated Schottky o r Schottky-like diode but without probl ematic high leakage current. NextPowerS 3 is particularly suited to high effici ency applications at high switching fre quencies. 2. Features and benefits • Ultra low QG, QGD and QOSS for hi

PSMN4R0-30YLD Datasheet, N-channel MOSFET

PSMN4R0-30YLD   PSMN4R0-30YLD  
gh system efficiency, especially at high er switching frequencies • Superfast switching with soft-recovery; s-factor > 1 • Low spiking and ringing for low EMI designs • Unique “SchottkyPlus ” technology; Schottky-like performan ce with < 1 µA leakage at 25 °C • O ptimised for 4.5 V gate drive • Low p arasitic inductance and resistance • High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C Wave solderable; exposed leads for op timal visual solder inspection 3. Appl ications • On-board DC-to-DC solution s for server and telecommunications • Secondary-side synchronous rectificati on in telecommunication applications Voltage regulator modules (VRM) • P oint-of-Load (POL) modules • Power de livery for V-core, ASIC, DDR, GPU, VGA and system components • Brushed and b rushless motor control 4. Quick refere nce data Table 1. Symbol VDS ID Ptot Quick reference data Parameter Conditi ons drain-source voltage 25 °C ≤ Tj ≤ 175 °C drain current Tmb = 25 C; VGS = 10 V; Fig. 1 total power dis sipation Tmb = 25 °C; Fig. 2 Min Typ Max Unit - - 30 V - - 95 A - - 64 W Ne xperia PSMN4R0-30YLD N-channel 30 V, 4 .0 mΩ logic level MOSFET in LFPAK56 us ing NextPowerS3 Technology Symbol Parameter Tj junction temperature Static characteristic








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