PSMN0R9-30YLD Datasheet (data sheet) PDF





PSMN0R9-30YLD Datasheet, N-channel MOSFET

PSMN0R9-30YLD   PSMN0R9-30YLD  

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PSMN0R9-30YLD N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 u sing NextPowerS3 Technology 14 Decembe r 2015 Product data sheet 1. General description 300 Amp Logic level gate dr ive N-channel enhancement mode MOSFET i n LFPAK56 package. NextPowerS3 portfoli o utilising Nexperia’s unique “Scho ttkyPlus” technology delivers high ef ficiency, low spiking performance usual ly associated with MOSFETs with an inte grated Schottky or Schottky-like diode but without problematic high leakage cu rrent. NextPowerS3 is particularly suit ed to high efficiency applications at h igh switching frequencies. 2. Features and benefits • 300 Amp capabili

PSMN0R9-30YLD Datasheet, N-channel MOSFET

PSMN0R9-30YLD   PSMN0R9-30YLD  
ty • Avalanche rated, 100 % tested at I(as) = 190 Amps • Ultra low QG, QGD and QOSS for high system efficiency, es pecially at higher switching frequencie s • Superfast switching with soft-rec overy; s-factor > 1 • Low spiking and ringing for low EMI designs • Unique “SchottkyPlus” technology; Schottk y-like performance with < 1 µA leakage at 25 °C • Optimised for 4.5 V gate drive • Low parasitic inductance and resistance • High reliability clip b onded and solder die attach Power SO8 p ackage; no glue, no wire bonds, qualifi ed to 150 °C • Wave solderable; expo sed leads for optimal visual solder ins pection 3. Applications • On-board D C-to-DC solutions for server and teleco mmunications • Secondary-side synchro nous rectification in telecommunication applications • Voltage regulator mod ules (VRM) • Point-of-Load (POL) modu les • Power delivery for V-core, ASIC , DDR, GPU, VGA and system components Brushed and brushless motor control • Power OR-ing 4. Quick reference da ta Table 1. Symbol VDS Quick referenc e data Parameter drain-source voltage Conditions 25 °C ≤ Tj ≤ 150 °C M in Typ Max Unit - - 30 V Nexperia PSM N0R9-30YLD N-channel 30 V, 0.87 mΩ, 30 0 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Symbol Parameter Conditions ID drain current Tmb = 25 °C; VGS = 10








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