PSMN1R2-30YLD Datasheet (data sheet) PDF





PSMN1R2-30YLD Datasheet, N-channel MOSFET

PSMN1R2-30YLD   PSMN1R2-30YLD  

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PSMN1R2-30YLD N-channel 30 V, 1.2 mΩ, 250 A logic level MOSFET in LFPAK56 us ing NextPowerS3 Technology 21 December 2018 Product data sheet 1. General d escription 250 A logic level gate drive N-channel enhancement mode MOSFET in L FPAK56 package. NextPowerS3 portfolio u tilising Nexperia’s unique “Schottk yPlus” technology delivers high effic iency, low spiking performance usually associated with MOSFETs with an integra ted Schottky or Schottky-like diode but without problematic high leakage curre nt. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features an d benefits • 250 A capability •

PSMN1R2-30YLD Datasheet, N-channel MOSFET

PSMN1R2-30YLD   PSMN1R2-30YLD  
Ultra low QG, QGD and QOSS for high syst em efficiency, especially at higher swi tching frequencies • Superfast switch ing with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI d esigns • Unique “SchottkyPlus” te chnology; Schottky-like performance wit h < 1 µA leakage at 25 °C • Optimis ed for 4.5 V gate drive • Low parasit ic inductance and resistance • High r eliability clip bonded and solder die a ttach Power SO8 package; no glue, no wi re bonds, qualified to 175 °C • Wave solderable; exposed leads for optimal visual solder inspection 3. Applicatio ns • On-board DC-to-DC solutions for server and telecommunications • Secon dary-side synchronous rectification in telecommunication applications • Volt age regulator modules (VRM) • Point-o f-Load (POL) modules • Power delivery for V-core, ASIC, DDR, GPU, VGA and sy stem components • Brushed and brushle ss motor control • Power OR-ing 4. Q uick reference data Table 1. Quick ref erence data Symbol Parameter VDS dra in-source voltage ID drain current Pt ot total power dissipation Tj junction temperature Static characteristics R DSon drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 175 °C V GS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 2 5 °C; Fig. 1 VGS = 4.5 V; ID = 25 A; Tj = 25 °C; Fig. 10 Min Typ Max Unit - - 30 V [1] - -








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