PSMN1R2-30YLD
N-channel 30 V, 1.2 mΩ, 250 A logic level MOSFET in
LFPAK56 using NextPowerS3 Technology
21 December 20...
PSMN1R2-30YLD
N-channel 30 V, 1.2 mΩ, 250 A logic level MOSFET in
LFPAK56 using NextPowerS3 Technology
21 December 2018
Product data sheet
1. General description
250 A logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “
SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated
Schottky or
Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
2. Features and benefits
250 A capability Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “
SchottkyPlus” technology;
Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds,
qualified to 175 °C Wave solderable; exposed leads for optimal visual solder inspection
3. Applications
On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage
regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brus...