PSMN1R0-40YLD Datasheet (data sheet) PDF





PSMN1R0-40YLD Datasheet, N-channel MOSFET

PSMN1R0-40YLD   PSMN1R0-40YLD  

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PSMN1R0-40YLD N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 us ing NextPower-S3 Schottky-Plus technolo gy 30 November 2017 Product data shee t 1. General description 280 Amp, logi c level gate drive N-channel enhancemen t mode MOSFET in 150 °C LFPAK56 packag e using advanced TrenchMOS Superjunctio n technology. This product has been des igned and qualified for high performanc e power switching applications. 2. Fea tures and benefits • 280 A capability • Avalanche rated, 100% tested at IA S = 190 A • NextPower-S3 technology d elivers 'superfast switching with soft recovery' • Low QRR, QG and QGD for h igh system efficiency and low EMI d

PSMN1R0-40YLD Datasheet, N-channel MOSFET

PSMN1R0-40YLD   PSMN1R0-40YLD  
esigns • Schottky-Plus body-diode, giv es soft switching without the associate d high IDSS leakage • Optimised for 4 .5 V gate drive utilising NextPower-S3 Superjunction technology • High relia bility LFPAK (Power SO8) package, coppe r-clip, solder die attach and qualified to 150 °C • Exposed leads can be wa ve soldered, visual solder joint inspec tion and high quality solder joints • Low parasitic inductance and resistanc e 3. Applications • Synchronous rect ification • DC-to-DC converters • H igh performance & high efficiency serve r power supply • Motor control • Po wer ORing 4. Quick reference data Tab le 1. Quick reference data Symbol Par ameter Conditions VDS drain-source vo ltage 25 °C ≤ Tj ≤ 150 °C ID dr ain current VGS = 10 V; Tmb = 25 °C; Fig. 2 Ptot total power dissipation Tm b = 25 °C; Fig. 1 Tj junction tempera ture Static characteristics RDSon dr ain-source on-state VGS = 4.5 V; ID = 2 5 A; Tj = 25 °C; resistance Fig. 10; Fig. 11 VGS = 10 V; ID = 25 A; Tj = 2 5 °C; Fig. 10; Fig. 11 Min Typ Max Un it - - 40 V [1] - - 280 A - - 198 W -55 - 150 °C - 1.1 1.4 mΩ - 0.93 1 .1 mΩ Nexperia PSMN1R0-40YLD N-chan nel 40 V, 1.1 mΩ, 280 A logic level MO SFET in LFPAK56 using NextPower-S3 Scho ttky-Plus technology Symbol Parameter Dynamic characteristics QGD gate-drain charg








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