PSMN1R4-40YLD Datasheet (data sheet) PDF





PSMN1R4-40YLD Datasheet, N-channel MOSFET

PSMN1R4-40YLD   PSMN1R4-40YLD  

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PSMN1R4-40YLD N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 us ing NextPower-S3 technology 14 March 2 019 Product data sheet 1. General des cription 240 Amp, logic level gate driv e N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. Thi s product has been designed and qualifi ed for high performance power switching applications. 2. Features and benefit s • 240 A capability • Avalanche ra ted, 100% tested at IAS = 190 A • Nex tPower-S3 technology delivers 'superfas t switching with soft recovery' • Low QRR, QG and QGD for high system effici ency and low EMI designs • Schottky

PSMN1R4-40YLD Datasheet, N-channel MOSFET

PSMN1R4-40YLD   PSMN1R4-40YLD  
-Plus body-diode, gives soft switching w ithout the associated high IDSS leakage • Optimised for 4.5 V gate drive uti lising NextPower-S3 Superjunction techn ology • High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 175 °C • Exp osed leads can be wave soldered, visual solder joint inspection and high quali ty solder joints • Low parasitic indu ctance and resistance 3. Applications • Synchronous rectification • DC-to -DC converters • High performance & h igh efficiency server power supply • Motor control • Power OR-ing 4. Quic k reference data Table 1. Quick refere nce data Symbol Parameter VDS drain- source voltage ID drain current Ptot total power dissipation Tj junction te mperature Static characteristics RDSo n drain-source on-state resistance Dy namic characteristics Conditions 25 ° C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 4.5 V; ID = 25 A; Tj = 25 °C; Fig. 10 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 10 Min Typ Max Unit - - 40 V [1 ] - - 240 A - - 238 W -55 - 175 °C - 1.38 1.85 mΩ - 1.12 1.4 mΩ Nexper ia PSMN1R4-40YLD N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK5 6 using NextPower-S3 technology Symbol QGD QG(tot) Parameter gate-drain charge total gate charge Conditions ID = 25 A; V








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