PSMN3R3-80ES

PSMN3R3-80ES N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK Rev. 1 — 31 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive 1.3 Applications  DC-to-DC converters  Load switch  Motor control  Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy [1] Continuous current is limited by package. [2] Measured 3 mm from package. Conditions Min Typ Max Unit Tj ≥ 25 °C; Tj ≤ 175 °C - - 80 V Tmb = 25 °C; VGS = 10 V; see Figure 1 [1] - - 120 A Tmb = 25 °C; see Figure 2 - - 338 W -55 - 175 °C VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 [2] - 4.6 5.4 mΩ 2.8 3.3 mΩ VGS = 10 V; ID = 75 A; VDS = 40 V; see Figure 14; see Figure 15 - 27 - nC - 139 - nC VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; - - 676 mJ Vsup ≤ 80 V; RGS = 50...