PBSS4240Z

PBSS4240Z 40 V, 2 A NPN low VCEsat (BISS) transistor 16 October 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240Z 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current tp ≤ 1 ms; single pulse collector-emitter saturation resistance IC = 1 A; IB = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C Min Typ Max Unit - - 40 V - - 2A - - 3A - - 275 mΩ Nexperia PBSS4240Z 40 V, 2 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter 4 C collector Simplified outline 4 123 SC-73 (SOT223) Graphic symbol 2, 4 1 3 sym016 6. Ordering information Table 3. Ordering information Type number Package Name PBSS4240Z SC-73 Description plastic surface-mounted package with increased he...