PMXB350UPE Datasheet (data sheet) PDF





PMXB350UPE Datasheet, P-channel Trench MOSFET

PMXB350UPE   PMXB350UPE  

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PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1 . General description P-channel enhance ment mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 ( SOT1215) Surface-Mounted Device (SMD) p lastic package using Trench MOSFET tech nology. 2. Features and benefits • T rench MOSFET technology • Leadless ul tra small and ultra thin SMD pla

PMXB350UPE Datasheet, P-channel Trench MOSFET

PMXB350UPE   PMXB350UPE  
stic package: 1.1 × 1.0 × 0.37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge (ESD) protection 1 kV HBM • Drain-so urce on-state resistance RDSon = 350 m 3. Applications • High-side load switch and charging switch for portable devices • Power management in batter y driven portables • LED driver • D C-to-DC converter 4. Quick reference data Ta








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