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PMCXB900UE
complementary N/P-channel Trench MOSFET
Description
PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect
Transistor
(FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET techn...
nexperia
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