PMXB65ENE
30 V, N-channel Trench MOSFET
3 November 2016
Product data sheet
1. General description
N-channel enhancemen...
PMXB65ENE
30 V, N-channel Trench MOSFET
3 November 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV Very low Drain-Source on-state resistance RDSon = 44 mΩ
3. Applications
Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 3.2 A; Tj = 25 °C
Min Typ Max
- - 30
-20 -
[1] -
-
20 3.2
- 44 67
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Unit V V A
mΩ
Nexperia
PMXB65ENE
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain 4 D drain
Simplified outline
1
Graphic symbol
D
43
G
2
Transparent top view
DFN1010D-3 (SOT1215)
S 017aaa255
6. Ordering in...