BSH111BK Datasheet (PDF)





BSH111BK Datasheet - N-channel Trench MOSFET

BSH111BK   BSH111BK  

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BSH111BK 55 V, N-channel Trench MOSFET 2 6 November 2014 Product data sheet 1. General description N-channel enhancem ent mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mou nted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOS FET technology • ElectroStatic Dis

BSH111BK Datasheet - N-channel Trench MOSFET

BSH111BK   BSH111BK  
charge (ESD) protection > 3 kV HBM 3. A pplications • Relay driver • High-s peed line driver • Low-side loadswitc h • Switching circuits 4. Quick refe rence data Table 1. Symbol VDS VGS ID Quick reference data Parameter drain-s ource voltage gate-source voltage drain current Static characteristics RDSon drain-source on-state resistance Con ditions Tj = 25 °C VGS = 4.5 V; Tamb








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