PBSS4112PANP

PBSS4112PANP 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor 29 November 2012 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP. 1.2 Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 1.3 Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor; for the PNP transistor with negative polarity VCEO collector-emitter voltage open base IC collector current ICM peak collector current single pulse; tp ≤ 1 ms TR1 (NPN) RCEsat collector-emitter saturation resistance IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Min Typ Max Unit - - 120 V - - 1A - - 1.5 A - - 240 mΩ Nexperia PBSS4112PANP 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor Symbol TR2 (PNP) RCEsat Parameter Conditions collector-emitter saturation resistance IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Min Typ Max Un...