DatasheetsPDF.com

PBSS4230PAN Dataheets PDF



Part Number PBSS4230PAN
Manufacturers nexperia
Logo nexperia
Description 2A NPN/NPN low VCEsat (BISS) transistor
Datasheet PBSS4230PAN DatasheetPBSS4230PAN Datasheet (PDF)

PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 14 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP. PNP/PNP complement: PBSS5230PAP. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current.

  PBSS4230PAN   PBSS4230PAN


Document
PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 14 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP. PNP/PNP complement: PBSS5230PAP. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • Load switch • Battery-driven devices • Power management • Charging circuits • Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per transistor VCEO collector-emitter voltage IC collector current ICM peak collector current Per transistor RCEsat collector-emitter saturation resistance Conditions open base single pulse; tp ≤ 1 ms IC = 1 A; IB = 0.1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Min Typ Max Unit - - 30 V - - 2A - - 3A - - 145 mΩ Nexperia PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E1 emitter TR1 2 B1 base TR1 3 C2 collector TR2 4 E2 emitter TR2 5 B2 base TR2 6 C1 collector TR1 7 C1 collector TR1 8 C2 collector TR2 Simplified outline 654 Graphic symbol C1 B2 E2 78 TR2 TR1 123 Transparent top view DFN2020-6 (SOT1118) E1 B1 C2 sym140 6. Ordering information Table 3. Ordering information Type number Package Name PBSS4230PAN DFN2020-6 Description plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm Version SOT1118 7. Marking Table 4. Marking codes Type number PBSS4230PAN Marking code 2G 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Per transistor VCBO collector-base voltage open emitter VCEO collector-emitter voltage open base VEBO emitter-base voltage open collector IC collector current ICM peak collector current single pulse; tp ≤ 1 ms IB base current PBSS4230PAN All information provided in this document is subject to legal disclaimers. Product data sheet 14 December 2012 Min Max Unit - 30 V - 30 V - 7V - 2A - 3A - 0.3 A © Nexperia B.V. 2017. All rights reserved 2 / 17 Nexperia PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor Symbol IBM Ptot Per device Ptot Tj Tamb Tstg Parameter peak base current total power dissipation Conditions single pulse; tp ≤ 1 ms Tamb ≤ 25 °C Min Max Unit - 1A [1] - 370 mW [2] - 570 mW [3] - 530 mW [4] - 700 mW [5] - 450 mW [6] - 760 mW [7] - 700 mW [8] - 1450 mW total power dissipation Tamb ≤ 25 °C junction temperature ambient temperature storage temperature [1] - 510 mW [2] - 780 mW [3] - 730 mW [4] - 960 mW [5] - 620 mW [6] - 1040 mW [7] - 960 mW [8] - 2000 mW - 150 °C -55 150 °C -65 150 °C [1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint. [4] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2. [5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint. [6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2. [7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint. [8] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2. PBSS4230PAN Product data sheet All information provided in this document is subject to legal disclaimers. 14 December 2012 © Nexperia B.V. 2017. All rights reserved 3 / 17 Nexperia 1.5 (1) Ptot (W) 1.0 (2) (3) (4) (5) 0.5 (6) (7) (8) PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 006aad165 0 -75 -25 25 75 Fig. 1. (1) 4-layer PCB 70 µm, mounting pad for collector 1 cm2 (2) FR4 PCB 70 µm, mounting pad for collector 1 cm2 (3) 4-layer PCB 70 µm, standard footprint (4) 4-layer PCB 35 µm, mounting pad for collector 1 cm2 (5) FR4 PCB 35 µm, mounting pad for collector 1 cm2 (6) 4-layer PCB 35 µm, standard footprint (7) FR4 PCB 70 µm, standard footprint (8) FR4 PCB 35 µm, standard footprint Per transistor: power derating curves 125 175 Tamb (°C) 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Per transistor Rth(j-a) thermal resistance from junction to ambient Conditions in free air Rth(j-sp) th.


PBSS4160PAN PBSS4230PAN PBSS4230PANP


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)