PBSS5112PAP
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor
30 November 2012
Product data sheet
1. Product profile
...
PBSS5112PAP
120 V, 1 A
PNP/
PNP low VCEsat (BISS)
transistor
30 November 2012
Product data sheet
1. Product profile
1.1 General description
PNP/
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/
PNP complement: PBSS4112PANP.
NPN/
NPN complement: PBSS4112PAN.
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation AEC-Q101 qualified
1.3 Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per
transistor
VCEO
collector-emitter voltage
IC collector current
ICM peak collector current
VEBO
emitter-base voltage
Per
transistor
RCEsat
collector-emitter saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms open collector
IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -120 V - - -1 A - - -1.5 A - - -7 V
- - 440 mΩ
Nexperia
PBSS5112PAP
120 V, 1 A
PNP/
PNP low VCEsat (BISS)
transistor
2. Pinning information
Table 2. Pinning information Pin Symbol Description 1 E1 emitter TR1 2 B1 base TR1 3 C2 collector TR2 4 E2 emitter TR2 5 B2 base TR2 ...