BAV99

Switching Diodes Silicon Epitaxial Planar BAV99 1. Applications Ultra-High-Speed Switching 2. Packaging and Internal Circuit BAV99 1: Anode 1 2: Cathode 2 3: Cathode 1/Anode 2 SOT23 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage Reverse voltage VRM VR 100 V 100 Peak forward current Average rectified current Non-repetitive peak forward surge current IFM IO IFSM (Note 1) (Note 2) (Note 3) 500 mA 215 mA 2A Power dissipation PD (Note 4) 150 mW 320 Junction temperature Tj 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit rating. Total rating = Unit rating × 40% Note 2: Unit rating. Total rating = Unit rating × 55% Note 3: Measured with a 10 ms pulse. Note 4: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt, Cu pad: 0.42 mm2 × 3) ©2016 Toshiba Corporation 1 Start of c...