BAV99 Datasheet (data sheet) PDF





BAV99 Datasheet, Silicon Epitaxial Planar Switching Diodes

BAV99   BAV99  

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Switching Diodes Silicon Epitaxial Plana r BAV99 1. Applications • Ultra-High- Speed Switching 2. Packaging and Intern al Circuit BAV99 1: Anode 1 2: Cathod e 2 3: Cathode 1/Anode 2 SOT23 3. Abs olute Maximum Ratings (Note) (Unless ot herwise specified, Ta = 25 ) Charac teristics Symbol Note Rating Unit Peak reverse voltage Reverse voltage V RM VR 100 V 100 Peak forward current Average rectified current Non-repetitiv e peak forward surge current IFM IO IF SM (Note 1) (Note 2) (Note 3) 500 mA 215 mA 2A Power dissipation PD (Note 4) 150 mW 320 Junction temperature T j 150  Storage temperature Tstg -55 to 150 Note: Using continu

BAV99 Datasheet, Silicon Epitaxial Planar Switching Diodes

BAV99   BAV99  
ously under heavy loads (e.g. the applic ation of high temperature/current/volta ge and the significant change in temper ature, etc.) may cause this product to decrease in the reliability significant ly even if the operating conditions (i. e. operating temperature/current/voltag e, etc.) are within the absolute maximu m ratings. Please design the appropriat e reliability upon reviewing the Toshib a Semiconductor Reliability Handbook (" Handling Precautions"/"Derating Concept and Methods") and individual reliabili ty data (i.e. reliability test report a nd estimated failure rate, etc). Note 1 : Unit rating. Total rating = Unit rati ng × 40% Note 2: Unit rating. Total ra ting = Unit rating × 55% Note 3: Measu red with a 10 ms pulse. Note 4: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt, Cu pad: 0.42 mm2 × 3) ©201 6 Toshiba Corporation 1 Start of comm ercial production 2016-08 2016-10-20 Re v.1.0 4. Electrical Characteristics (U nless otherwise specified, Ta = 25 ) Characteristics Forward voltage Rever se current Total capacitance Reverse re covery time Symbol VF (1) VF (2) VF (3 ) VF (4) IR (1) IR (2) Ct trr Test Con dition IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA VR = 25 V VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, See Fig. 4.1. Min         Typ.       0.9  BAV99 Max 0.








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