Purpose Transistors. MMBT2222ALT1 Datasheet

MMBT2222ALT1 Transistors. Datasheet pdf. Equivalent

Part MMBT2222ALT1
Description General Purpose Transistors
Feature General Purpose Transistors NPN Silicon 3 COLLECTOR 1 BASE MAXIMUM RATINGS 2 EMITTER Rating S.
Manufacture ETL
Datasheet
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MMBT2222ALT1
General Purpose Transistors
NPN Silicon
3
COLLECTOR
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
V CEO
V CBO
V EBO
IC
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
2222
30
60
5.0
600
2222A
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P;
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage MMBT2222
(I C = 10 mAdc, I B = 0)
MMBT2222A
Collector–Base Breakdown Voltage
MMBT2222
(I C = 10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
MMBT2222A
MMBT2222
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current
MMBT2222A
MMBT2222A
( V CE = 60 Vdc, I EB(off) = 3.0Vdc)
Collector Cutoff Current
(V CB = 50 Vdc, I E = 0)
(V CB = 60 Vdc, I E = 0)
(V CB = 50 Vdc, I E = 0, T A = 125°C)
(V CB = 60 Vdc, I E = 0, T A = 125°C)
Emitter Cutoff Current
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
(V EB = 3.0 Vdc, I C = 0)
Base Cutoff Current
MMBT2222A
(V CE = 60 Vdc, V EB(off) = 3.0 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
MMBT2222A
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CEX
I CBO
I EBO
I BL
Min
30
40
60
75
5.0
6.0
––
––
––
––
MMBT2222LT1
MMBT2222ALT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Max Unit
— Vdc
––
— Vdc
— Vdc
––
10 nAdc
µAdc
0.01
0.01
10
10
100 nAdc
20 nAdc
O4–1/5



MMBT2222ALT1
MMBT2222LT1 MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(I C = 0.1 mAdc, V CE = 10 Vdc)
(I C = 1.0 mAdc, V CE = 10 Vdc)
(I C = 10 mAdc, V CE = 10 Vdc)
(I C = 10 mAdc, V CE = 10 Vdc,T A= –55°C )
(I C = 150 mAdc, V CE = 10 Vdc) (3)
(I C = 150 mAdc, V CE = 1.0 Vdc) (3)
(I C = 500 mAdc, V CE = 10 Vdc)(3)
MMBT2222A only
MMBT2222
MMBT2222A
hFE
Collector–Emitter Saturation Voltage(3)
(I C = 150 mAdc, I B = 15 mAdc)
MMBT2222
MMBT2222A
VCE(sat)
(I C = 500mAdc, I B = 50 mAdc)
MMBT2222
MMBT2222A
Base–Emitter Saturation Voltage
(I C = 150 mAdc, I B = 15 mAdc)
MMBT2222
MMBT2222A
V BE(sat)
(I C = 500 mAdc, I B = 50 mAdc)
MMBT2222
MMBT2222A
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(4)
MMBT2222
(I C = 20mAdc, V CE= 20Vdc, f = 100MHz)
Output Capacitance(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
MMBT2222A
MMBT2222
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
MMBT2222A
Input Impedance(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MMBT2222A
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
MMBT2222A
Voltage Feedback Ratio(V CE=10 Vdc, I C= 1.0mAdc, f =1.0kHz) MMBT2222A
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
MMBT2222A
Small–Signal Current Gain(VCE=10Vdc,I C=1.0mAdc, f=1.0kHz) MMBT2222A
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
MMBT2222A
Output Admittance(V CE=10 Vdc, I C = 1.0 mAdc,f =1.0 kHz) MMBT2222A
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
MMBT2222A
Curren Base Time Comstant
fT
C obo
C ibo
h ie
h re
h fe
h oe
(V CB= 20 Vdc, I E = 20 mAdc, f = 31.8 MHz)
MMBT2222A
Noise Figure(VCE=10Vdc, IC=100µAdc, RS=1.0k, f =1.0kHz) MMBT2222A
rb, C C
NF
SWITCHING CHARACTERISTICS
Delay Time
(V CC = 30 Vdc, V EB(off) = – 0.5 Vdc
Rise Time
I C = 150 mAdc, I B1 = 15 mAdc)
Storage Time
(V CC = 30 Vdc, I C = 150 mAdc
Fall Time
I B1 = I B2 = 15 mAdc)
td
tr
ts
tf
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
4.f T is defined as the frequency at which h fe extrapolates to unity.
Min
35
50
75
35
100
50
30
40
––
––
––
––
––
0.6
––
––
250
300
––
––
––
2.0
0.25
–-
50
75
5.0
25
––
––
Max Unit
––
––
––
300
––
––
Vdc
0.4
0.3
1.6
1.0
Vdc
1.3
1.2
2.6
2.0
–– MHz
––
8.0 pF
30 pF
25
8.0 k
1.25
8.0
X 10 –4
4.0
300 —
375
35 µmhos
200
150 ps
4.0 dB
— 10
— 25 ns
— 225 ns
— 60
O4–2/5





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