MMBT2222ALT1

General Purpose Transistors NPN Silicon 3 COLLECTOR 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS V CEO V CBO V EBO IC Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING 2222 30 60 5.0 600 2222A 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 417 –55 to +150 mW/°C °C/W °C MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P; ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage MMBT2222 (I C = 10 mAdc, I B = 0) MMBT2222A Collector–Base Breakdown Voltage MMBT2222 (I C = 10 µAdc, I E = 0) Emitter–Base Breakdown Voltage MMBT2222A MMBT2222 (I E = 10 µAdc, I C = 0) Collector Cutoff Current MMBT2222A MMBT2222A ( V CE = 60 Vdc, I EB(off) = 3.0Vdc) Collector Cutoff Current (V CB = 50 Vdc, I E = 0) (V CB = 60 Vdc, I E = 0) (V CB = 50 Vdc, I E = 0, T A = 125°C) (V CB = 60 Vdc, I E = 0, T A = 125°C) Emitter Cutoff Current MMBT2222 MMBT2222A MMBT2222 MMBT2222A (V EB = 3.0 Vdc, I C = 0) Base Cutoff Current MMBT2222A (V CE = 60 Vdc, V EB(off) = 3.0 Vdc) 1. FR...