SBAV99LT1G

MEI Lead Free RoHS Compliant Dual Series Switching Diode We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. BAV99LT1G SBAV99LT1G SOT–23 DEVICE MARKING ORDERING INFORMATION Device BAV99LT1G SBAV99LT1G BAV99LT3G SBAV99LT3G Marking Shipping A7 3000 Tape & Reel A7 10000 Tape & Reel MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (1) (averaged over any 20 ms period) Repetitive Peak Forward Current Non–Repetitive Peak Forward Current t = 1.0 µ s t = 1.0 ms t = 1.0 S THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board, (1) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1 ANODE 3 CAHODE/ANODE 2 CATHODE Symbol VR IF I FM(surge) V RRM I F(AV) I FRM I FSM Value 70 215 500 70 715 450 2.0 1.0 0.5 Unit Vdc mAdc mAdc V mA mA A Symbol PD R θJA PD R θJA T J , T stg Max 225 1.8 556 300 2.4 417 –65 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C MEI Lead Free RoHS Compliant BAV99LT1G , SBAV99LT1G ELECTRICAL CHARACTERISTICS (T...