2N7002K Datasheet (data sheet) PDF





2N7002K Datasheet, 60V N-Channel MOSFET

2N7002K   2N7002K  

Search Keywords: 2N7002K, datasheet, pdf, GOOD-ARK, 60V, N-Channel, MOSFET, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

FEATURES ● VDS=60V, ID=0.3A RDS(ON) < 3.5Ω @ VGS=5V RDS(ON) < 3Ω @ VGS=10 V ESD Rating: 1000V HBM ● High Power and Current Handling Capability ● Lea d Free ● Surface Mount Package 2N700 2K 60V N-Channel MOSFET Schematic Diagr am APPLICATIONS ● Direct Logic-Level Interface: TTL/CMOS ● Drivers: Relay s, Solenoids, Lamps Hammers, Display, M emories, Transistors etc ● Battery Op erated Systems ● Solid-State Relays Marking and Pin Assignment PACKAGE MAR KING AND ORDERING INFORMATION Device M arking Device Device Package Reel Si ze S72 2N7002K SOT-23 Ø180mm SOT- 23 Top View Tape width 8 mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS (TA=25°C

2N7002K Datasheet, 60V N-Channel MOSFET

2N7002K   2N7002K  
unless otherwise noted) Parameter Symb ol Drain-Source Voltage VDS Gate-Sou rce Voltage VGS ID Drain Current-Con tinuous@ Current-Pulsed (Note 1) ID (7 0°C ) IDM Maximum Power Dissipation PD Operating Junction and Storage Tem perature Range TJ,TSTG THERMAL CHARAC TERISTICS Thermal Resistance,Junction-t o-Ambient (Note 2) RθJA ELECTRICAL C HARACTERISTICS (TA=25°C unless otherwi se noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Bre akdown Voltage BVDSS VGS=0V ID=250μA Limit 60 ±20 0.3 0.26 0.8 0.43 -55 T o 175 Unit V V A A W °C 350 °C/W M in Typ Max Unit 60 V 1/6 2N7002K 60V N-Channel MOSFET Zero Gate Voltage Dra in Current Gate-Body Leakage Current Ga te-Source Breakdown Voltage ON CHARACTE RISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forwa rd Transconductance DYNAMIC CHARACTERIS TICS (Note4) Input Capacitance Output C apacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Tur n-on Delay Time Turn-Off Delay Time Tot al Gate Charge DRAIN-SOURCE DIODE CHARA CTERISTICS Diode Forward Voltage (Note 3) IDSS IGSS BVGSO VGS(th) RDS(ON) gFS Clss Coss Crss td(on) td(off) Qg VSD VDS=60V,VGS=0V VGS=±5V,VDS=0V VGS=±10 V,VDS=0V VGS=±20V,VDS=0V VDS=0V, IG=± 250uA ±20 VDS=VGS,ID=250μA VGS=10V, ID=0.5A VGS=5V, ID=0.05A








@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)