FDV301N

Digital FET, N-Channel FDV301N, FDV301N-F169 General Description This N−Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values. Features 25 V, 0.22 A Continuous, 0.5 A Peak ♦ RDS(on) = 5 W @ VGS = 2.7 V ♦ RDS(on) = 4 W @ VGS = 4.5 V Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V Gate−Source Zener for ESD Ruggedness. > 6 kV Human Body Model Replace Multiple NPN Digital Transistors with One DMOS FET This Device is Pb−Free and Halide Free Vcc D OUT IN G S GND Figure 1. Inverter Application DATA SHEET www.onsemi.com D G S SOT−23 CASE 318−08 MARKING DIAGRAM &E&Y 301&E&G &E = Designates Space &Y = Binary Calendar Year Coding Scheme 301 = Specific Device Code &G = Date Code ORDERING INFORMATION Device Package Shipping† FDV301N, FDV301N−F169 SOT−23−3 (Pb−Free, Halide−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconducto...