BC847C

BC847B, BC847C General Purpose SMD NPN Transistors SOT-23 Features: Silicon planar epitaxial transistors. General purpose NPN transistors. Pin Configuration 1. Base 2. Emitter 3. Collector Package Outline Details Absolute Maximum Ratings Collector-emitter voltage (VBE = 0) Collector-emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25°C Junction temperature Symbol VCES VCEO ICM Ptot Tj Maximum BC847B BC847C 50 45 200 250 150 Units V mA mW °C Page 1 31/05/05 V1.0 BC847B, BC847C General Purpose SMD NPN Transistors Absolute Maximum Ratings Small-signal current gain IC = 2mA; VCE = 5V; f = 1kHz Transition frequency at f = 100MHz IC = 10mA; VCE = 5V Noise figure at RS = 2kW IC = 200mA; VCE = 5V f = 1kHz; B = 200Hz Symbol hfe fT F Minimum Minimum Typical Ratings (at TA = 25°C unless otherwise specified) Symbol Collector-base voltage (open emitter) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (dc) Collector current (peak value) Emitter current (peak value) Base current (peak value) VCBO VCES VCEO VEBO IC ICM -IEM IBM Maximum Total power dissipation upto Tamb: 25°C Ptot Storage temperature Junction temperature Tstg Tj Maximum Thermal Resistance From junction to ambient Rth(j-a) = Characteristics (Tj = 25°C unless otherwise specified) Collector cut off current IE = 0; VCB = 30V IE = 0; VCB = 30V; Tj = 150°C Base-emitter v...