2N7000

N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect Transistor Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability RoHS compliance Mechanical Data TO-92 Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N7000 VDSS Drain-Source Voltage 60 VDGR Drain-Gate Voltage (RGS≤1MΩ) 60 VGSS ID IDP Gate-Source Voltage Drain Current Continuous Non Repetitive (tp<50µs) Continuous Pulsed ±20 ±40 200 500 PD Drain Power Dissipation 400 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Unit V V V V mA mA mW °C °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. B/NX Page 1 of 8 N-Channel Enhancement Mode Field Effect Transistor Equivalent Circuit 2N7000 This transistor is electrostatic sensitive device. Please handle with caution. Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate- Body Leakage, Forward Gate- Body Leakage, Reverse On Characteristics (Note) Min. 60 - Typ. - Max. 1 1 -1 Unit V µA µA µA Symbol Description Min. Ty...