2N7000 Datasheet (data sheet) PDF





2N7000 Datasheet, N-Channel Enhancement Mode Field Effect Transistor

2N7000   2N7000  

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N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancemen t Mode Field Effect Transistor Feature s • High density cell design for low RDS(ON) • Voltage controlled small s ignal switch • Rugged and reliable High saturation current capability RoHS compliance Mechanical Data TO-9 2 Case: Terminals: Weight: TO-92, Pla stic Package Solderable per MIL-STD-20

2N7000 Datasheet, N-Channel Enhancement Mode Field Effect Transistor

2N7000   2N7000  
2G, Method 208 0.18 gram Maximum Rating s (T Ambient=25ºC unless noted otherwi se) Symbol Description 2N7000 VDSS Drain-Source Voltage 60 VDGR Drain- Gate Voltage (RGS≤1MΩ) 60 VGSS ID IDP Gate-Source Voltage Drain Current Continuous Non Repetitive (tp<50µs) Continuous Pulsed ±20 ±40 200 500 P D Drain Power Dissipation 400 TJ Junc tion Temperature 150 TSTG Storage








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