LL4148

Features * Fast switching diode in MiniMELF case especially suited for automatic surface mounting LL4148 Silicon Epitaxial Planar Switching Diode Cathode C B A LL-34 INCHES MM DIM MIN MAX MIN MAX A 0.134 0.142 3.40 3.60 B 0.008 0.016 0.20 0.40 C 0.055 0.059 1.40 1.50 Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs Power Dissipation Junction Temperature Storage Temperature Range 1) Valid provided that electrodes are kept at ambient temperature. Symbol VRM VR IF(AV) IFSM Ptot Tj Tstg Value 100 75 200 0.5 1 4 500 1) 175 - 65 to + 175 Unit V V mA A mW ℃ ℃ Version: 6.1 www.jgdsemi.com LL4148 Silicon Epitaxial Planar Switching Diode Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Reverse Breakdown Voltage tested with 100 µA Pulses Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150℃ Capacitance at VR = 0, f = 1 MHz Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz Reverse Recovery Time at IF = 10 mA to IR = 1 mA, Irr = 0.1 x IR ,VR = 6 V, RL = 100 Ω Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V 1) Valid provided that electrodes are kept at ambient temperature. Symbol V(BR)R VF IR Ctot Vfr trr RthA ηV Min. 100 - - - 0.45 ...