BSS84

P-Channel -50V MOSFET Features: Surface-mounted package Voltage controlled p-channel small signal switch Reduce power loss conserve energy Halogen free Application DC-DC converters Energy efficient Power management in portable and battery-powered product. BSS84 BVDSS= -50V , RDS(ON)≦10Ω@VGS= -5V ID= -130mA Absolute Maximum Ratings (TA=25℃Unless Otherwise Noted) Parameter Symbol Marking Drain-Source Voltage VDSS Gate-Source Voltage VGS Continuous Drain Current@Ta=25℃ ID Pulsed Drain Current(tp≦10us) Power Dissipation Ta=25℃ IDM PD Operating Junction and Storage Temperature Range TJ, Tstg BSS84 PD -50 ±20 -130 -520 225 -55 to150 Thermal Characteristics Symbol Characteristic RθJA Junction-to-Ambient Typ. --- Max. 556 Unit V V mA mA mW ℃ Units ℃/W Rev.2, Apr-2014 Page 1 of 5 P-Channel -50V MOSFET Electrical Characteristics (TA =25℃Unless Otherwise Specified) Symbol Static(1) Parameter Test Condition BVDSS VGS(th) IGSS IDSS RDS(ON) Dynamic(2) Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance VGS=0V,ID=-250µA VDS=VGS,ID=-250µA VDS =0V,VGS=±20V VDS =-50V,VGS=0V VGS=-5 V, ID=-100mA Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time VDS=-5V, VGS=0V, f =1.0MHz tr Turn-On Rise Time td(off) Turn-Off Delay Time VDS=-15V, ID=-0.25Adc, VGS=-10Vdc, RGEN=25Ω, RL=50Ω tf Turn-Off Fall Time BSS84 Min. Typ. Max. Unit -50 -...