BSS84

SMD Type Ƶ Features ƽ VDS (V) = -50V ƽ ID = -130 mA ƽ RDS(ON) ˘ 10ȍ (VGS = -5V) TraMnOsiSsFtoErsT P-Channel MOSFET BSS84 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.21.6 -0.1 0.55 0.4 +0.22.8 -0.1 D G S 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.10.68 -0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (tpİ10ȝs) Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating -50 ±20 -130 -520 225 556 150 -55 to 150 Unit V mA mW ć/W ć www.kexin.com.cn 1 SMD Type P-Channel MOSFET BSS84 Ƶ Electrical Characteristics Ta = 25ć Unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS ID=-250ȝA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=-25V, VGS=0V VDS=-50V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID=-1.0mA Static Drain-Source On-Resistance RDS(On) VGS=-5V, ID=-100mA Forward Transconductance gFS VDS=-25V, ID=-100mA, f=1.0KHz Input Capacitance Ciss Output Capacitance Coss VGS=0V, VDS=-5V, f=1MHz Reverse Transfer Capacitance Crss Turn-On DelayTime td(on) Turn-On Rise Time Turn-Off DelayTime tr td(off) VDD=-15V, ID=-0.25A, RL=50ȍ 1) Turn-Off Fall Time tf Gate Charge QT Maximum Body-Diode Continuous C...