BSS84

Main Product Characteristics V(BR)DSS RDS(on)MAX ID -50V 8Ω@-10V 10Ω@ -5V -0.13A  SOT-23 BSS84 50V P-Channel MOSFET D GS Marking and Pin Assignment Schematic Diagram Features and Benefits „ Advanced MOSFET process technology „ Ideal for DC-DC converter, power management in portable battery, computer, printer, cellular and general purpose applications „ Low on-resistance with low gate charge „ Fast switching and reverse body recovery Description The BSS84 utilizes the latest processing techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in DC-DC converter, power management in portable battery, computer, printer, cellular and general purpose applications. Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (note 1) @tp <10 μs Power Dissipation Thermal Resistance from Junction to Ambient (note 2) Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD RθJA TJ TSTG Value -50 ±20 -0.13 -0.52 225 556 150 -55 to +150 Maximum Lead Temperature for Soldering Purposes , Duration for 5 Seconds TL 260 Unit V V A A mW °C/W °C °C °C 1/4 BSS84 50V P-Channel MOSFET Electrical Characteristics (TA=25°C unless otherwise specified) Parameter STATIC CHARACTERISTICS Drain-Source Breakdown Voltage Symbol V (BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current Ga...