BSS84 Datasheet (data sheet) PDF





BSS84 Datasheet, P-Channel Enhancement Mode Field-Effect Transistor

BSS84   BSS84  

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BSS84 — P-Channel Enhancement Mode Fie ld-Effect Transistor BSS84 P-Channel E nhancement Mode Field-Effect Transistor Features  -0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V  Voltage-Con trolled P-Channel Small-Signal Switch  High-Density Cell Design for Low R DS(ON)  High Saturation Current D D S SOT-23 G G Absolute Maximum Ra tings S Description This P-channel en

BSS84 Datasheet, P-Channel Enhancement Mode Field-Effect Transistor

BSS84   BSS84  
hancement-mode field-effect transistor i s produced using ON Semiconductor’s p roprietary, high cell density, DMOS tec hnology. This very high density process minimizes on-state resistance and to p rovide rugged and reliable performance and fast switching. The BSS84 can be us ed, with a minimum of effort, in most a pplications requiring up to 0.13 A DC a nd can deliver current up to 0








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