P-Channel MOSFET
P-Channel MOSFET
BSS84-HF
P-Channel RoHS Device
Halogen Free
Features
-VDS (V) = -50V -ID = -130 mA -RDS(ON) < 10Ω(VG...
Description
P-Channel MOSFET
BSS84-HF
P-Channel RoHS Device
Halogen Free
Features
-VDS (V) = -50V -ID = -130 mA -RDS(ON) < 10Ω(VGS= -5V)
Circuit diagram
- G : Gate - S : Source - D : Drain
D
G S
Maximum Ratings (at TA=25°C unless otherwise noted)
SOT-23
0.055(1.40) 0.047(1.20)
0.046(1.17) 0.037(0.97)
0.114(3.00) 0.110(2.80)
D
GS 0.079(2.00) 0.070(1.80)
0.006(0.15) 0.003(0.08) 0.098(2.50) 0.091(2.30)
0.020(0.50) 0.012(0.30)
Dimensions in inches and (millimeter)
°C °C °C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Drain-Source Breakdown Voltage
VDSS ID=-250uA, VGS=0V
Zero Gate Voltage Drain Current
I DSS
VDS=-25V, V GS=0V VDS=-50V, V GS=0V
Gate-Body Leakage Current
IGSS
VDS=0V, V GS=±20V
Gate Threshold Voltage
VGS(th) VDS=VGS , ID=-1.0mA
Static Drain-Source On-Resistance
RDS(On) VGS=-5V, I D=-100mA
Forward Transconductance
gFS VDS=-25V, ID=-100mA, f=1.0KHz
Input Capacitance
Ciss
Output Capacitance
Coss
VGS=0V, V DS=-5V, f=1MHz
Reverse Transfer Capacitance
C rss
Turn-On DelayTime
t d(on)
Turn-On Rise Time Turn-Off DelayTime
tr t d(off)
VDD=-15V, I D=-0.25A, RL=50 1)
Turn-Off Fall Time
tf
Gate Charge
QT
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Diode Forward Voltage
V SD
ISD=-130mA,VGS=0V
Notes :1) Switching Time is Essentially Independent of Operating Temperature.
Min Typ Max Unit
-50 V
-0.1 A
-15
±10 A
-0.8 -2 V
10 Ω
50 mS
30
10 pF
5
2.5
1 n...
Similar Datasheet